Emerging MRAM Circuit Design Principal Engineer/Technical Manager
台灣積體電路製造新竹科學工業園區Update time: September 13,2019
Job Description
The candidate will work with process and device R&D teams in Taiwan to develop memory test chips for process development and memory macros for product development.
- Work with process R&D team to define and drive memory architecture, device spec and technology features of high density memory.
- Lead the design team to implement memory test chip and macro for product developments.
- Evaluate memory architecture option for diverse product requirements.
Qualifications
- Must have M.S/Ph.D. degree in Electrical Engineering.
- 5+ years' experience in memory product or memory technology development, especially emerging memory development.
- Strong experience in STT-MRAM test chip design and product development.
- Good track records in delivering memory products and technology development.
- Fluent in either Chinese or English.
Primary Location: Taiwan-Hsinchu
Job: IC Design Technology
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